Ultrawide bandgap materials

Ultrawide Bandgap Semiconductors for Future of Moore's Law

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B9 R2325

This talk will explore why the ultrawide bandgap semiconductor is called the 4th generation semiconductor?

Ultrawide Bandgap Nano Devices

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B9 L2 R2325

This seminar explores how nanoscale device architectures can unlock new functionalities in ultrawide bandgap (UWBG) materials beyond conventional applications.

Yan Wang

Ph.D. Student, Photonics Laboratory
M.S./Ph.D. in Electrical Engineering at King Abdullah University of Science and Technology (KAUST), Saudi Arabia, Aug. 2024- present BEng. in Communication Engineering at University of Electronic Science and Technology of China (UESTC), Chengdu, China, Sept. 2019 - Jun. 2024​
KAUST-CEMSE-ECE-PhD-Dissertation-Defense-Dhanu-Chetri-Ultrawide-Bandgap-Semiconductor-Devices-and-Monolithic-Circuits

Ultrawide Bandgap Semiconductor Devices and Monolithic Circuits

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B3 L5 R5220

This thesis investigates the potential of ultrawide bandgap (UWBG) semiconductors like gallium oxide (Ga2O3) and aluminium nitride (AlN) for high-power applications, focusing on the development of monolithic devices and circuits, including pseudo-CMOS inverters, bidirectional switches, and MOSFETs, demonstrating their potential for next-generation electronics operating in extreme environments.

Ting’ang (挺昂) Liu

Glen Isaac Maciel García

Ph.D. Student, Applied Physics

Haicheng Cao

Postdoctoral Research Fellow, Applied Mathematics and Computational Science
KAUST-CEMSE-ECE-ASL-Dhanu-Chettri-0561

Dhanu Chettri